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Canonical ID: NK-brqnyTfgmeTkYkEAYUx9M8 · Entity type: Company (reference)
| Property | Value | Lang | Source dataset | Source ID | First seen | ||
|---|---|---|---|---|---|---|---|
LegalEntity:address | 13 LAVRENTIEV AVEN., NOVOSIBIRSK, RUS, 630090 | eng | us_sam_exclusions | usgsa-s4mrtyfqt | |||
LegalEntity:address | 13 Lavrentiev Avenue, Novosibirsk, 630090, Russia. | jp_meti_ru | jp-meti-ru-1941ad6e1d5f07337e8a8390f3c3101db1b28b4e | ||||
Organization:address | Російська Федерація, 630090, Новосибірська область, м. Новосибірськ, просп. Академіка Лаврентьєва, буд. 13 | ukr | ua_nsdc_sanctions | ua-nsdc-22498-federalnij-derzavnij-budzetnij-zaklad-nauki-institut-fiziki-napivprovidnikiv-im-a-v-rzanova-sibirskogo-viddilenna-rosijskoi-akademii-nauk | |||
Organization:address | 13 Lavrentiev Aven., 630090 Novosibirsk | eng | us_ofac_sdn | ofac-39186 | |||
LegalEntity:address | 13 Lavrentiev Aven., Novosibirsk, 630090, Russia | jpn | jp_mof_sanctions | ja-mof-3d8115a0c182c8a0fd6a6fa6283c904b9287d6cb | |||
LegalEntity:address | 13 Lavrentiev Avenue, Novosibirk, 630090 | us_trade_csl | trade-csl-46f4468227bfc988fd93e188d3d23fe9659e80ca96233e5458ba5190 | ||||
LegalEntity:address | 13 Prospekt Akademika Lavrentyeva, Novosibirsk, Novosibirk Oblast, Novosibirk, 630090 | us_trade_csl | trade-csl-46f4468227bfc988fd93e188d3d23fe9659e80ca96233e5458ba5190 | ||||
LegalEntity:address | 13 Prospekt Akademika Lavrentyeva, Novosibirsk, Novosibirk Oblast, 630090, Russia | jp_meti_ru | jp-meti-ru-1941ad6e1d5f07337e8a8390f3c3101db1b28b4e | ||||
Company:address | ПР-КТ АКАДЕМИКА ЛАВРЕНТЬЕВА Д.13, Г. НОВОСИБИРСК, НОВОСИБИРСКАЯ ОБЛАСТЬ, 630090 | ext_ru_egrul | ru-inn-5408100057 | ||||
LegalEntity:address | 13 LAVRENTIEV AVEN., NOVOSIBIRSK, RUS, 630090 | eng | us_sam_exclusions | usgsa-s4mrtyfqv | |||
LegalEntity:address | 13 LAVRENTIEV AVEN., NOVOSIBIRSK, RUS, 630090 | eng | us_sam_exclusions | usgsa-s4mrn6pzv | |||
LegalEntity:addressEntity | addr-f2a1df3c66aadac0fc1aba9c319188106aae1ab2 | jpn | jp_mof_sanctions | ja-mof-3d8115a0c182c8a0fd6a6fa6283c904b9287d6cb | |||
Organization:addressEntity | addr-f65e237197f7b65a21668d8df01275bcca62b4ef | eng | us_ofac_sdn | ofac-39186 | |||
Organization:alias | Rzhanov Institute of Semiconductor Physics SB RAS | eng | us_ofac_sdn | ofac-39186 | |||
Organization:alias | Federalnyi derzhavnyi biudzhetnyi zaklad nauky Instytut fizyky napivprovidnykiv im. A.V. Rzhanova Sybirskoho viddilennia Rosiiskoyi akademiyi nauk | ua_nsdc_sanctions | ua-nsdc-22498-federalnij-derzavnij-budzetnij-zaklad-nauki-institut-fiziki-napivprovidnikiv-im-a-v-rzanova-sibirskogo-viddilenna-rosijskoi-akademii-nauk | ||||
LegalEntity:alias | IPP SB RAS | eng | jp_meti_ru | jp-meti-ru-1941ad6e1d5f07337e8a8390f3c3101db1b28b4e | |||
LegalEntity:alias | Institute of Semiconductor Physics IM A.V. Rzhanov | us_trade_csl | trade-csl-46f4468227bfc988fd93e188d3d23fe9659e80ca96233e5458ba5190 | ||||
LegalEntity:alias | IPP SB RAS | us_trade_csl | trade-csl-46f4468227bfc988fd93e188d3d23fe9659e80ca96233e5458ba5190 | ||||
Organization:alias | Institute of Semiconductor Physics NA A.V. Rzhanov | eu_journal_sanctions | eu-oj-cc607ef61b6491007626a6509af376cac4623a36 | ||||
Organization:alias | IPP SB RAS | eu_journal_sanctions | eu-oj-cc607ef61b6491007626a6509af376cac4623a36 | ||||
Organization:alias | IFP SO RAN | eu_journal_sanctions | eu-oj-cc607ef61b6491007626a6509af376cac4623a36 | ||||
Organization:alias | ИФП СО РАН | eu_journal_sanctions | eu-oj-cc607ef61b6491007626a6509af376cac4623a36 | ||||
Company:alias | IPP SB RAS | eu_journal_sanctions | eu-oj-5435e848f6efc05dd392b6ed6948a6f0a6cf48ab | ||||
Company:alias | Institute of Semiconductor Physics IM A.V. Rzhanov | eng | us_special_leg | us-leg-rzhanov-institute-of-semiconductor-physics-siberian-branch-of-russian-academy-of-sciences | |||
LegalEntity:alias | （別称、ルジャノフ半導体物理学研究所SB RAS及びISP SB RAS） | jpn | jp_mof_sanctions | ja-mof-3d8115a0c182c8a0fd6a6fa6283c904b9287d6cb | |||
LegalEntity:alias | ISP SB RAS | jpn | jp_mof_sanctions | ja-mof-3d8115a0c182c8a0fd6a6fa6283c904b9287d6cb | |||
LegalEntity:alias | Rzhanov Institute of Semiconductor Physics SB RAS | jpn | jp_mof_sanctions | ja-mof-3d8115a0c182c8a0fd6a6fa6283c904b9287d6cb | |||
Company:alias | IPP SB RAS | eng | us_special_leg | us-leg-rzhanov-institute-of-semiconductor-physics-siberian-branch-of-russian-academy-of-sciences | |||
LegalEntity:alias | Федеральное государственное бюджетное учреждение науки Институт физики полупроводников им. А.В. Ржанова Сибирского отделения Российской академии наук | ca_dfatd_sema_sanctions | ca-sema-0fc37f5e65018951ffdf2837a164ae89ceb32dc6 | ||||
Organization:alias | ISP SB RAS | eng | us_ofac_sdn | ofac-39186 | |||
LegalEntity:alias | Ａ．Ｖ．ルジャノフ名称半導体物理学研究所 | jpn | jp_meti_ru | jp-meti-ru-1941ad6e1d5f07337e8a8390f3c3101db1b28b4e | |||
LegalEntity:alias | Institute of Semiconductor Physics IM A.V. Rzhanov | eng | jp_meti_ru | jp-meti-ru-1941ad6e1d5f07337e8a8390f3c3101db1b28b4e | |||
LegalEntity:country | ru | eng | us_sam_exclusions | usgsa-s4mrtyfqv | |||
LegalEntity:country | ru | ca_dfatd_sema_sanctions | ca-sema-0fc37f5e65018951ffdf2837a164ae89ceb32dc6 | ||||
Organization:country | ru | eng | us_ofac_sdn | ofac-39186 | |||
LegalEntity:country | ru | us_trade_csl | trade-csl-46f4468227bfc988fd93e188d3d23fe9659e80ca96233e5458ba5190 | ||||
LegalEntity:country | ru | eng | us_sam_exclusions | usgsa-s4mrtyfqt | |||
LegalEntity:country | ru | eng | us_sam_exclusions | usgsa-s4mrn6pzv | |||
LegalEntity:createdAt | 2024-10-31 | eng | us_sam_exclusions | usgsa-s4mrtyfqv | |||
LegalEntity:createdAt | 2023-01-25 | ch_seco_sanctions | ch-seco-59613 | ||||
LegalEntity:createdAt | 2022-11-28 | eng | us_sam_exclusions | usgsa-s4mrn6pzv | |||
LegalEntity:createdAt | 2024-10-31 | eng | us_sam_exclusions | usgsa-s4mrtyfqt | |||
Organization:email | ifp@isp.nsc.ru | eu_journal_sanctions | eu-oj-cc607ef61b6491007626a6509af376cac4623a36 | ||||
Organization:id | a7cb262fb3663de60c124ab504709e905f334e86 | ua_nsdc_sanctions | ua-nsdc-22498-federalnij-derzavnij-budzetnij-zaklad-nauki-institut-fiziki-napivprovidnikiv-im-a-v-rzanova-sibirskogo-viddilenna-rosijskoi-akademii-nauk | ||||
Organization:id | 0280df2637b8405d494c47e781601f0af93d3e1b | eng | us_ofac_sdn | ofac-39186 | |||
LegalEntity:id | 297a3c139ae8926677b3ad1ee635242f64e7aeab | jpn | jp_mof_sanctions | ja-mof-3d8115a0c182c8a0fd6a6fa6283c904b9287d6cb | |||
LegalEntity:id | 77031f34f3b49bd12447724cf2250234e3e4dde3 | ca_dfatd_sema_sanctions | ca-sema-0fc37f5e65018951ffdf2837a164ae89ceb32dc6 | ||||
LegalEntity:id | 5f29f0f894b247a87700be4d5daf2397bcc52e19 | eu_sanctions_map | eu-sancmap-a4d633cb06ee16084ade763c6562ed777bff7fda | ||||
LegalEntity:id | eaf46668c378ea929271d4c66dcec2857fa33e8a | us_trade_csl | trade-csl-46f4468227bfc988fd93e188d3d23fe9659e80ca96233e5458ba5190 | ||||
Organization:id | 6b2c074fcf2899b96ae52248a3fb6e28681ef2ba | us_trade_csl | ofac-39186 | ||||
LegalEntity:id | be92d112818d9c77b5833cbd0bf041f54d12216e | jp_meti_ru | jp-meti-ru-1941ad6e1d5f07337e8a8390f3c3101db1b28b4e | ||||
LegalEntity:id | ab4994a9f299c47440a17e4b7f6e27277e5ff672 | eng | us_sam_exclusions | usgsa-s4mrtyfqv | |||
LegalEntity:id | a88de6fe707fafda0fd7b835f01b0918459c343c | eng | us_sam_exclusions | usgsa-s4mrtyfqt | |||
LegalEntity:id | 2caacdcf436cfb865a9b766590a95cc53b0a2590 | eng | us_sam_exclusions | usgsa-s4mrn6pzv | |||
Company:id | 326c324f9bb698df76768b090307e96449fdbf88 | ext_ru_egrul | ru-inn-5408100057 | ||||
LegalEntity:id | 3a1dbf93b607d0c9b274417a5dda84bfa34c40f7 | ch_seco_sanctions | ch-seco-59613 | ||||
Company:id | 272dbbf2eba658947080469ce1562dde931a5368 | eng | us_special_leg | us-leg-rzhanov-institute-of-semiconductor-physics-siberian-branch-of-russian-academy-of-sciences | |||
Company:id | b0e2d51a507688fe1f9b5e7564658f37cb0bb386 | eng | us_special_leg | us-leg-rzhanov-institute-of-semiconductor-physics-siberian-branch-of-russian-academy-of-sciences | |||
Company:id | c7203f231e8ba6fef78b2b83822be410110f0e18 | eng | us_special_leg | us-leg-rzhanov-institute-of-semiconductor-physics-siberian-branch-of-russian-academy-of-sciences | |||
Company:id | 29e07aa3439c460a56326c4ed0611799b853f9ff | eng | us_special_leg | us-leg-rzhanov-institute-of-semiconductor-physics-siberian-branch-of-russian-academy-of-sciences | |||
Company:id | 4646f164551fa8eeed6c4d0c5bf6f49c87902c5f | eu_journal_sanctions | eu-oj-5435e848f6efc05dd392b6ed6948a6f0a6cf48ab | ||||
Organization:id | 61aec16fee006811fc0fb320d4b0334981018c16 | eu_journal_sanctions | eu-oj-cc607ef61b6491007626a6509af376cac4623a36 | ||||
Company:incorporationDate | 2002-11-20 | ext_ru_egrul | ru-inn-5408100057 | ||||
Organization:innCode | 5408100057 | ua_nsdc_sanctions | ua-nsdc-22498-federalnij-derzavnij-budzetnij-zaklad-nauki-institut-fiziki-napivprovidnikiv-im-a-v-rzanova-sibirskogo-viddilenna-rosijskoi-akademii-nauk | ||||
Company:innCode | 5408100057 | ext_ru_egrul | ru-inn-5408100057 | ||||
Company:jurisdiction | ru | ext_ru_egrul | ru-inn-5408100057 | ||||
Organization:jurisdiction | ru | ua_nsdc_sanctions | ua-nsdc-22498-federalnij-derzavnij-budzetnij-zaklad-nauki-institut-fiziki-napivprovidnikiv-im-a-v-rzanova-sibirskogo-viddilenna-rosijskoi-akademii-nauk | ||||
Company:kppCode | 540801001 | ext_ru_egrul | ru-inn-5408100057 | ||||
Company:legalForm | Федеральные государственные бюджетные учреждения | ext_ru_egrul | ru-inn-5408100057 | ||||
LegalEntity:modifiedAt | 2023-08-16 | ch_seco_sanctions | ch-seco-59613 | ||||
Company:name | Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences | eu_journal_sanctions | eu-oj-5435e848f6efc05dd392b6ed6948a6f0a6cf48ab | ||||
Organization:name | Rzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences | eng | us_ofac_sdn | ofac-39186 | |||
LegalEntity:name | ロシア科学アカデミーシベリア支部ルジャノフ半導体物理学研究所 | jpn | jp_mof_sanctions | ja-mof-3d8115a0c182c8a0fd6a6fa6283c904b9287d6cb | |||
LegalEntity:name | RZHANOV INSTITUTE OF SEMICONDUCTOR PHYSICS SB RAS | eng | us_sam_exclusions | usgsa-s4mrtyfqt | |||
Organization:name | Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences | eu_journal_sanctions | eu-oj-cc607ef61b6491007626a6509af376cac4623a36 | ||||
Organization:name | Федеральное государственное бюджетное учреждение науки Институт физики полупроводников им. А.В. Ржанова Сибирского отделения Российской академии наук | ua_nsdc_sanctions | ua-nsdc-22498-federalnij-derzavnij-budzetnij-zaklad-nauki-institut-fiziki-napivprovidnikiv-im-a-v-rzanova-sibirskogo-viddilenna-rosijskoi-akademii-nauk | ||||
Company:name | Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences | eng | us_special_leg | us-leg-rzhanov-institute-of-semiconductor-physics-siberian-branch-of-russian-academy-of-sciences | |||
LegalEntity:name | Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences (IPP SB RAS) | ch_seco_sanctions | ch-seco-59613 | ||||
LegalEntity:name | RZHANOV INSTITUTE OF SEMICONDUCTOR PHYSICS SIBERIAN BRANCH OF RUSSIAN ACADEMY OF SCIENCES | eng | us_sam_exclusions | usgsa-s4mrn6pzv | |||
Organization:name | Federal State Budgetary Institution of Science A.V. Rzhanov Institute of Semiconductor Physics | ua_nsdc_sanctions | ua-nsdc-22498-federalnij-derzavnij-budzetnij-zaklad-nauki-institut-fiziki-napivprovidnikiv-im-a-v-rzanova-sibirskogo-viddilenna-rosijskoi-akademii-nauk | ||||
Organization:name | Федеральний державний бюджетний заклад науки Інститут фізики напівпровідників ім. А.В. Ржанова Сибірського відділення Російської академії наук | ukr | ua_nsdc_sanctions | ua-nsdc-22498-federalnij-derzavnij-budzetnij-zaklad-nauki-institut-fiziki-napivprovidnikiv-im-a-v-rzanova-sibirskogo-viddilenna-rosijskoi-akademii-nauk | |||
LegalEntity:name | Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences (IPP SB RAS) | eu_sanctions_map | eu-sancmap-a4d633cb06ee16084ade763c6562ed777bff7fda | ||||
Company:name | ИНСТИТУТ ФИЗИКИ ПОЛУПРОВОДНИКОВ СИБИРСКОГО ОТДЕЛЕНИЯ РОССИЙСКОЙ АКАДЕМИИ НАУК | ext_ru_egrul | ru-inn-5408100057 | ||||
Company:name | УЧРЕЖДЕНИЕ РОССИЙСКОЙ АКАДЕМИИ НАУК ИНСТИТУТ ФИЗИКИ ПОЛУПРОВОДНИКОВ ИМ. А.В. РЖАНОВА СИБИРСКОГО ОТДЕЛЕНИЯ РАН | ext_ru_egrul | ru-inn-5408100057 | ||||
Company:name | ФЕДЕРАЛЬНОЕ ГОСУДАРСТВЕННОЕ БЮДЖЕТНОЕ УЧРЕЖДЕНИЕ НАУКИ ИНСТИТУТ ФИЗИКИ ПОЛУПРОВОДНИКОВ ИМ. А.В. РЖАНОВА СИБИРСКОГО ОТДЕЛЕНИЯ РОССИЙСКОЙ АКАДЕМИИ НАУК | ext_ru_egrul | ru-inn-5408100057 | ||||
LegalEntity:name | Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences | eng | jp_meti_ru | jp-meti-ru-1941ad6e1d5f07337e8a8390f3c3101db1b28b4e | |||
LegalEntity:name | Rzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences | ca_dfatd_sema_sanctions | ca-sema-0fc37f5e65018951ffdf2837a164ae89ceb32dc6 | ||||
LegalEntity:name | ロシア科学アカデミーシベリア支部、ルジャノフ半導体物理学研究所 | jpn | jp_meti_ru | jp-meti-ru-1941ad6e1d5f07337e8a8390f3c3101db1b28b4e | |||
Organization:name | RZHANOV INSTITUTE OF SEMICONDUCTOR PHYSICS SIBERIAN BRANCH OF RUSSIAN ACADEMY OF SCIENCES | us_trade_csl | ofac-39186 | ||||
LegalEntity:name | ISP SB RAS | eng | us_sam_exclusions | usgsa-s4mrtyfqv | |||
LegalEntity:name | Rzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences | eng | jp_mof_sanctions | ja-mof-3d8115a0c182c8a0fd6a6fa6283c904b9287d6cb | |||
LegalEntity:name | Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences | us_trade_csl | trade-csl-46f4468227bfc988fd93e188d3d23fe9659e80ca96233e5458ba5190 | ||||
Organization:name | Федеральное Государственное Бюджетное Учреждение Науки Институт Физики Полупроводников им. А.В. Ржанова Сибирского Отделения Российской Академии Наук | eu_journal_sanctions | eu-oj-cc607ef61b6491007626a6509af376cac4623a36 | ||||
Organization:name | Siberian Branch of the Russian Academy of Sciences | ua_nsdc_sanctions | ua-nsdc-22498-federalnij-derzavnij-budzetnij-zaklad-nauki-institut-fiziki-napivprovidnikiv-im-a-v-rzanova-sibirskogo-viddilenna-rosijskoi-akademii-nauk | ||||
LegalEntity:notes | Russia | ch_seco_sanctions | ch-seco-59613 | ||||
LegalEntity:notes | (also RZHANOV INSTITUTE OF SEMICONDUCTOR PHYSICS SIBERIAN BRANCH OF RUSSIAN ACADEMY OF SCIENCES) | eng | us_sam_exclusions | usgsa-s4mrtyfqt | |||
LegalEntity:notes | (also RZHANOV INSTITUTE OF SEMICONDUCTOR PHYSICS SIBERIAN BRANCH OF RUSSIAN ACADEMY OF SCIENCES) | eng | us_sam_exclusions | usgsa-s4mrtyfqv | |||
LegalEntity:notes | (also RZHANOV INSTITUTE OF SEMICONDUCTOR PHYSICS SB RAS, ISP SB RAS) | eng | us_sam_exclusions | usgsa-s4mrn6pzv | |||
Organization:ogrnCode | 1025403651283 | ua_nsdc_sanctions | ua-nsdc-22498-federalnij-derzavnij-budzetnij-zaklad-nauki-institut-fiziki-napivprovidnikiv-im-a-v-rzanova-sibirskogo-viddilenna-rosijskoi-akademii-nauk | ||||
Company:ogrnCode | 1025403651283 | ext_ru_egrul | ru-inn-5408100057 | ||||